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| to ? 92 1. emitter 2. collector 3. base to-92 plastic-encapsulate transistors 2SC1213A transistor (npn) features z low frequency amplifier z complementary pair with 2sa673a maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 0.01ma,i e =0 50 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 50 v emitter-base breakdown voltage v (br)ebo i e =0.01ma,i c =0 4 v collector cut-off current i cbo v cb =20v,i e =0 0.5 a emitter cut-off current i ebo v eb =3v,i c =0 0.1 a h fe(1) v ce =3v, i c =10ma 60 320 dc current gain h fe(2) v ce =3v, i c =500ma 10 collector-emitter saturation voltage v ce(sat) i c =150ma,i b =15ma 0.6 v base-emitter voltage v be v ce =3v, i c =10ma 0.75 v classification of h fe(1) rank b c d range 60-120 100-200 160-320 symbol parameter value unit v cbo collector-base voltage 50 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 4 v i c collector current 0.5 a p c collector power dissipation 400 mw r ja thermal resistance from junction to ambient 312 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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